Sökresultat för: K15A50D Toshiba MOSFET Datablad
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K15A50D Toshiba MOSFET. Products (2) Datasheets (1) Images (1) Newest Products. -. Results: 2.
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Sökresultat för: K15A50D Toshiba MOSFET Datablad
Keysight B1500A provides the complete solution for device characterization with these versatile capabilities. K155ID1 Data Sheet Author: Jonas Jasulaitis Created Date: 1/21/2004 10:58:03 PM Type Designator: TK5A50D. Marking Code: K5A50D. Type of Transistor: MOSFET.
Sökresultat för: K15A50D Toshiba MOSFET Datablad
Maximum Power Dissipation (Pd): 35 W. Maximum Drain-Source Voltage |Vds|: 500 V. Maximum Gate-Source Voltage |Vgs|: 30 V. Maximum Gate-Threshold Voltage |Vgs (th)|: 4.4 V. Maximum Drain Current |Id|: 5 A. Technical Data Sheet - 3M™ Double Coated Tape 9731 K5A50D Datasheet – N-ch, MOSFET, 500V – Toshiba. Posted on September 20, 2020.
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MOSFET. Parameters and Characteristics.
In a new sheet of the workbook which you want to collect data from sheets, click Data > Consolidate.
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Sökresultat för: K15A50D Toshiba MOSFET Datablad
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Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 500 V. HMC788A: 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block Data Sheet (Rev. D) HMC788A Military Data Sheet PDF K15A60U Datasheet - N-Ch, Vdss=600V, MOSFET - Toshiba, TK15A60U datasheet, K15A60U pdf, K15A60U pinout, K15A60U manual, K15A60U schematic. Datasheet, PDF. Dongguan City Niuhang E List of Unclassifed Man List of Unclassifed Man OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS. Galaxy Semi-Conductor H Changzhou Shunye Electr Bilateral Voltage triggered Switch Breakover Voltage:95-280Volts. SIDACs feature glass-passivated junctions to ensure a rugged and dependable.